JSSC 2023第9期Clocking & PLLs90nm SiGe BiCMOS

A 04-4 THz p-i-n Diode Frequency Multiplier in 90-nm SiGe BiCMOS Sidharth Thomas

90nm SiGe BiCMOS工艺下实现的0.4-4 THz p-i-n二极管倍频器，具有高谐波辐射能力。

0.39 THz时EIRP 13 dBm，0.78 THz时EIRP -3.8 dBm，最高测至4.03 THz

太赫兹倍频器p-i-n二极管谐波辐射SiGe BiCMOS

▸利用p-i-n二极管反向恢复效应实现高非线性谐波生成

▸采用折叠偶极子天线辐射THz信号

▸演示无线谐波注入锁定技术实现外部源同步

Abstract

This article introduces a silicon-based source that can radiate power from the lower end of the terahertz (THz) spectrum into the far-infrared region. The radiator consists of a millimeter-wave (mm-wave) oscillator that drives a PIN diode multiplier. The p-i-n diodes exhibit reverse recovery when driven strongly, and the diode switches a large amount of current in a short interval. This process is highly non-linear and generates a harmonic-rich waveform, which is utilized here for higher harmoni