← 返回 JSSC 论文列表JSSC 2023第9期Data Converters65nm
A 0.4-V 0.0294-mm 2 Resistor-Based Temperature Sensor Achieving ±0.24 ◦C p2p Inaccuracy From −40 ◦C to 125 ◦C and 385 fJ · K2 Resolution FoM in 65-nm CMOS Dan Shi , Ka-Meng Lei
一种基于电阻的超低压温度传感器,适用于能量收集物联网设备,具有高精度和低功耗。
65nm CMOS, 0.4V, 10.4µW, ±0.24°C (p2p), 385 fJ·K²
超低压温度传感器能量收集物联网高精度
▸采用数字密集型频率锁定环(DFLL)和摆动增强RC前端实现超低压操作和高精度
▸具有背景偏移校准和电压调节功能的采样-升压动态比较器,确保在0.5V以下电源下的操作和精度
▸电阻调节的数字控制环形振荡器(DCRO)扩展了工作温度范围
Abstract
This article describes an ultralow-voltage (ULV) resistor-based temperature sensor for sub-0.5 V energy- harvesting Internet-of-Things (IoT) devices. The key features are: 1) a digital-intensive frequency-locked loop (DFLL) with a swing- boosted RC front-end to enable ULV operation with high accuracy and avert the analog-to-digital converter; 2) a sample-and-boost dynamic comparator featuring background offset calibration and voltage regulation to safeguard the operation and accuracy at a sub-0.5 V supply; and 3) a resistor-regulated digital-controlled ring oscillator (DCRO) to extend the operational temperature range. Prototyped in 65-nm CMOS, the temperature sensor occupies 0.0294 mm 2 and consumes 10.4 µW under 0.4 V at room temperature. The resolution figure-of-merit (FoM) is 385 fJ · K2, and the inaccuracy measures ±0.24 ◦C (p2p) over −40 ◦C to 125 ◦C, which outperforms the state-of-the-art sub-0.5 V temperature sensors.