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JSSC 2023第9期RF & Wireless65nm

A 085-pJb 16-GbsPin Single-Ended Transmitter With Integrated V oltage Modulation

一种采用集成电压调制技术的低功耗单端发射器，适用于内存接口。
16 Gb/s/pin, 0.85 pJ/bit, -12.6 dB 信道损耗
单端发射器集成电压调制低功耗前馈均衡内存接口
▸集成电压调制（IVM）技术，补偿连续逻辑0期间的符号间干扰（ISI）
▸结合四抽头IVM和两抽头上拉前馈均衡（FFE），提高能效
▸基于单位间隔（UI）的IVM，对噪声和PVT变化具有更好的抗干扰性
Abstract
A single-ended transmitter achieves low power con- sumption with an integrated voltage modulation (IVM) scheme for memory interfaces. The transmitter preserves the power advantages of the ground (VSS)-terminated single-ended sig- naling by consuming no static power when transmitting logic- 0s before the last bit of consecutive logic-0s (CLZs). All the intersymbol interference (ISI) accumulated during CLZs is compensated at once by the proposed IVM, which provides the unit interval (UI) spaced co