← 返回 JSSC 论文列表JSSC 2023第9期RF & Wireless130nm SiGe BiCMOSLNA
Design Aspects of Single-Ended and Differential SiGe Low-Noise Amplifiers Operat
本文研究了基于130nm SiGe BiCMOS工艺的超高频低噪声放大器设计，探索了在fmax/2以上频率的性能表现。
235GHz单端LNA:7.8dB增益/18mW功耗, 290GHz差分LNA:12.9dB增益/68mA@2V
太赫兹放大器SiGe BiCMOS低噪声放大器级联结构噪声系数
▸在fmax/2以上频率验证了SiGe工艺的可行性
▸采用级联结构分析增益提升和噪声降低技术
▸实现了四阶差分LNA在290GHz的高增益表现
Abstract
This article presents a single-stage single-ended
(SE) and a multistage pseudo-differential cascode low-noise
amplifiers (D-LNA) with their center frequencies at 235 and
290 GHz, respectively. Both low-noise amplifiers (LNAs) are
designed beyond half of the maximum frequency of oscillation
( fmax) in 130-nm SiGe BiCMOS technology with ft / fmax of
300/450 GHz. Implications of gain-boosting and noise reduction
techniques in cascode structure are analyzed and it is observed
that beyond fmax/2, the