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Guest Editorial IEEE 2022 BiCMOS and Compound Semiconductor Integrated Circuits and
IEEE JSSC 2022年特刊展示BiCMOS和化合物半导体集成电路技术进展，包括InP HBT和SiGe BiCMOS时钟生成电路及5G功率放大器。
最高谐波频率4 THz，频率范围27 GHz–48 GHz
BiCMOS化合物半导体InP HBTSiGe5G
▸实现硅基4 THz谐波生成
▸InP HBT频率倍增器设计
▸单级InP HBT功率放大器高效线性化
Abstract
of the IEEE J OURNAL OF
SOLID -STATE CIRCUITS features expanded versions
of selected articles presented at the 2022 BiCMOS and
Compound Semiconductor Integrated Circuits and Technol-
ogy Symposium (BCICTS) held in Phoenix, AZ, USA, on
October 16–19, 2022. The first three invited papers demon-
strate advances in indium phosphide (InP) heterojunction
bipolar transistor (HBT) and SiGe BiCMOS clock generation
circuits with the highest harmonics frequency 4 THz in sil-
icon IC. Their techniques overc