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JSSC 2023第10期Other55nm

C3MLS: An Ultra-Wide-Range Energy-Efficient Level Shifter With CCLS/CMLS Hybrid Structure

提出一种CCLS/CMLS混合电平转换器C3MLS,实现超宽范围高效能电平转换。
55nm CMOS, 0.3V-1.2V, 20.08ns延迟, 18.11fJ/转换, 0.12nW静态功耗
电平转换器超宽范围能效优化混合拓扑低功耗
创新点1:CCLS/CMLS混合拓扑结构(电路创新)。通过巧妙结合交叉耦合电平转换器(CCLS)和电流镜电平转换器(CMLS)的优势,解决了CCLS的电流竞争问题和CMLS的高静态电流问题,实现了超宽范围(0.196V-1.2V)的高效能级转换。
创新点2:有限电流竞争与无静态电流设计(电路创新)。采用动态电流限制技术,在转换过程中有效抑制电流竞争,同时通过结构优化彻底消除静态电流,静态功耗低至0.12nW@0.3V,能量延迟积达到业界最优。
创新点3:多阈值晶体管与短沟道效应优化(工艺创新)。通过多阈值电压晶体管组合和基于短沟道效应的尺寸优化,显著提升亚阈值区的转换可靠性,最低可转换输入电压达56mV@10kHz。
创新点4:可扩展延迟设计(系统创新)。采用传输门和电流限制器的协同设计,使传播延迟(20.08ns@0.3V→1.2V)随电源电压缩放呈现良好线性特性,支持动态电压调节应用。
Abstract
Level shifters (LSs) are essential circuit elements in digital integrated circuits with multiple power domains. Cross- coupled LS (CCLS) and current mirror LS (CMLS) are the classical topologies. However, CCLS has a current contention issue, while CMLS suffers from high static current. In this article, a CCLS/CMLS hybrid LS, C 3MLS, is proposed for ultra-wide- range level conversions from extremely low voltage deep in the subthreshold region to nominal supply voltage. By maintaining the merits of CCLS and CMLS and utilizing them to kill the drawbacks of each other, the proposed C 3MLS achieves limited- current-contention and static-current-free level conversions. Var- ious other circuit optimizations, such as use of pass transistors, current limiter, multi-threshold voltage transistors, and short- channel effect aware sizing, are also applied for the proposed LS. A test chip is fabricated in the UMC 55-nm low power CMOS technology. The measurement results across 20 samples from ten dies demonstrate that the proposed LS achieves a propagation delay of 20.08 ns and an energy consumption per transition of 18.11 fJ (on average) for 0.3 V-to-1.2 V level conversion with 1-MHz input frequency. The proposed LS exhibits the lowest energy-delay product among the state of the art and an average static power consumption of 0.12 nW at VDDL = 0.3 V . The measured average minimum convertible input level from 20 samples is 196 mV and 56 mV at 1-MHz and 10-kHz input frequencies, respectively.