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JSSC 2023第11期Data Converters65nm

An EMG Interface Comprising a Flexible a-IGZO Active Electrode Matrix and a 65-nm CMOS IC Enrico Genco, Student Member , IEEE, Carmine Garripoli , Jan-Laurens P. J. van der Steen, Gerwin H. Gelinck , Sahel Abdinia

提出一种基于柔性a-IGZO薄膜晶体管技术的4×4主动电极矩阵,用于监测肌肉收缩。
65nm CMOS, 1.2V, 20-dB in-band gain, 23-dB dc rejection
柔性电极a-IGZO薄膜晶体管EMGCMOS
创新点1:采用柔性a-IGZO薄膜晶体管技术实现高分辨率电极矩阵,在4×4 mm面积内集成电极和前端电路,支持毫米级精度的肌电信号测量,同时保持低功耗(5 mW)和高信噪比(55-µV rms输入参考噪声)。
创新点2:通过频率复用和电流域转换技术,将多通道信号通过单一输出传输至65-nm CMOS芯片,显著减少互连数量和硅面积占用,同时实现26V柔性电子与1.2V CMOS IC的高效接口兼容。
创新点3:集成开关电容高通滤波器于a-IGZO前端,提供25–40-MΩ阻抗和20-dB带内增益,其工艺和温度不敏感性增强了信号稳定性,并实现23-dB直流抑制,优化了生物信号采集质量。
创新点4:后端Si-IC采用偏移补偿跨阻放大器(TIA),具备50-dB直流抑制和可忽略的噪声贡献,可动态补偿柔性前端产生的可变偏置电流和偏移,提升系统整体精度和可靠性。
Abstract
In this work, a 4 × 4 active electrode (AE) matrix integrated on a flexible foil substrate to monitor muscular contraction is presented. The electrodes and their front ends (FEs) (i.e., AEs) are implemented on foil in amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) technol- ogy and interfaced with a custom 65-nm CMOS chip where analog-to-digital conversion and serial transmission of data from multiple channels are performed. On-foil frequency multiplexing and conversion to current domain are used to transmit to the silicon (Si)-IC, all the signals coming from a column of elec- trodes via a single output. This strategy enables interfacing the 26-V-supply flexible electronics with the 1.2-V-supply CMOS IC, while reducing the number of interconnects and Si area devoted to pads. The a-IGZO FE includes an integrated switched- capacitor high-pass input filter offering a 25–40-M impedance in the band of interest. Each AE on foil occupies 4 × 4 mm, enabling electromyography (EMG) measurements with millime- ter (mm)-range resolution. The a-IGZO amplifier in the AE, with its intrinsic bandpass response, achieves a process and temperature-insensitive 20-dB in-band gain and a 23-dB dc rejec- tion. The back-end Si-IC can compensate variable bias currents and offsets from the flexible FE exploiting an offset-compensated trans-impedance amplifier (TIA) with 50-dB-dc rejection and negligible noise contribution. The a-IGZO FE alone achieves 20-µA/V gain, 30-kHz bandwi