JSSC 2023第11期RF & Wireless65nmPower Amplifier

H-Band Power Amplifiers in 65-nm CMOS by Adopting Output Power Maximized Gmax-Co

65nm CMOS工艺下采用输出功率最大化Gmax核心的H波段高效功率放大器设计

245GHz时Psat 9.2dBm, OP1dB 6dBm, PAE 4.6%, 增益28dB

功率放大器CMOSGmax核心功率组合器H波段

▸采用输出功率最大化的Gmax核心设计

▸使用传输线基零度功率组合器和分配器

▸全放大级采用Gmax概念最大化每级增益

Abstract

This article proposes high-gain, high-output-power, and high-power-added efficiency (PAE) power amplifiers (PAs) by adopting an output power maximized (OPM) maximum achievable gain (Gmax)-core with the transmission line (TL)-based zero-degree power combiners (ZDCs) and zero-degree splitters (ZDSs). By utilizing the proposed small- and large-signal two- port network parameter-based analysis for implementing the Gmax-core, the last-stage OPM Gmax-core can maximize large- signal output power and sm