JSSC 2023第12期Other0.18µm

A Sub-1 V Capacitively Biased BJT-Based Temperature Sensor With an Inaccuracy of

提出一种低于1V的BJT温度传感器，采用电容偏置技术，实现高精度和高效能。

0.18-µm CMOS, 0.95V, 810nW, ±0.15°C inaccuracy, 0.34pJ·K² FoM

BJT温度传感器电容偏置开关电容ADC自归零反相器高效能

▸创新点1：电容偏置技术减少头空间需求（方法创新）。通过预充电采样电容至电源电压并放电通过BJT，减少了传统电流源所需的额外头空间，仅需约150 mV，显著降低了工作电压需求。

▸创新点2：采用开关电容ADC实现温度数字化（电路创新）。利用开关电容技术将BJT的基极-发射极电压转换为数字信号，实现了高精度的温度测量，支持低电压操作。

▸创新点3：自归零反相器积分器提高能效（电路创新）。采用自归零反相器积分器，增强了ADC的鲁棒性和能效，使传感器在0.95 V电源下仅消耗810 nW，显著降低了功耗。

▸创新点4：高精度与低功耗性能（系统创新）。传感器在-55°C至125°C范围内实现了±0.15°C的精度（3σ），且分辨率FoM为0.34 pJ·K²，比同类高精度BJT传感器低6倍以上。

Abstract

This article presents a sub-1 V bipolar junction transistor (BJT)-based temperature sensor that achieves both high accuracy and high energy efficiency. To avoid the extra headroom required by conventional current sources, the sensor’s diode-connected BJTs are biased by precharging sampling capac- itors to the supply voltage and then discharging them through the BJTs. This capacitive biasing technique requires little headroom (∼150 mV), and simultaneously samples the BJTs’ base–emitter voltages.