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A 0.05-mm 2 2.91-nJ/Decision Keyword-Spotting (KWS) Chip Featuring an Always-Retention 5T-SRAM in 28-nm CMOS Fei Tan , Student Member , IEEE
一款低功耗、高精度的关键词识别芯片,采用28nm CMOS工艺,实现2.91µW功耗和90%准确率。
28nm CMOS, 2.91µW, 2.91nJ/decision, 2ms/decision, 0.05mm² core area
关键词识别低功耗卷积神经网络SRAM稀疏感知计算
▸快速采样卷积神经网络(FS-CNN)消除高功耗特征提取器并降低决策延迟
▸常保持5T-SRAM通过字电压开关降低漏电功耗,单比特线操作减少SRAM读取功耗
▸高分辨率稀疏感知计算(HR-SAC)单元提升乘加运算精度和输出摆幅
Abstract
This article reports a keyword-spotting (KWS) chip for voice-controlled devices. It features a number of techniques to enhance the performance, area, and power efficiencies: 1) a fast-sampling convolutional neural network (FS-CNN) that eliminates the power-hungry feature extractors and reduces the decision latency; 2) an always-retention 5T-SRAM that features word-voltage switches to reduce the leakage power and single bitline (BL) operation to halve the SRAM read power compared to the typical 6T-SRAM; and 3) a high-resolution sparsity- aware computing (HR-SAC) unit that enhances the precision and output swing of the multiply–accumulate (MAC) compu- tation. Benchmarking with the state-of-the-art, our KWS chip prototyped in 28-nm CMOS scores a >90% accuracy for the 11-class Google speech command dataset (GSCD) at 2.91 µW, which corresponds to a 2.91-nJ energy/decision. The achieved latency is 2 ms/decision, and the core area is 0.05 mm 2, including the full KWS model.