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JSSC 2024第2期Power Management65nm CMOSSAR ADCNeural Network Accelerator

A 15.4-ENOB, Fourth-Order Truncation-Error- Shaping NS-SAR-Nested 16 Modulator With Boosted Input Impedance and Range for

一种高输入阻抗、宽线性输入范围的16调制器,用于生物医学信号采集。
94.5-dB SNDR, 1–500-Hz带宽, 600-mV PP输入, 174.3 dB FoM SNDR, 175.8 dB FoM DR, 208 MΩ@dc输入阻抗
生物医学信号采集噪声整形高输入阻抗截断误差整形SAR ADC
基于预采样的电荷转移减少技术提升输入阻抗
局部NS-SAR环路反馈实现截断误差整形
无需额外放大器的高效噪声整形
Abstract
This article presents a discrete-time 16 modulator (DSM) with a wide linear input range and high input impedance for biomedical signal acquisition. The proposed integrated circuit (IC) is based on a 1st-order DSM with 2nd-order noise-shaping (NS)-successive approximation (SAR) for high resolution with high power efficiency, directly converting the small input signal to digital. The first-stage integrator in the DSM is designed to support not only for wide-input swing at low power consumption but also for high input impedance. The input impedance is fur- ther boosted by a proposed presampling-based charge-transfer- reduction technique, which does not require any additional amplifiers. It precharges the sampling capacitor with just the previous sampled signal, thus reducing the charge transfer and boosting the input impedance. Besides, we also propose a new truncation-error shaping method. By feeding the truncation error back to the local NS-SAR loop, the truncation error is effectively noise-shaped without using any additional loop, resulting in 4th- order NS. The prototype IC is fabricated in a 65-nm CMOS process. It achieves 94.5-dB signal-to-noise-and-distortion ratio (SNDR) for 1–500-Hz bandwidth with 600-mV PP input applied, resulting in FoM SNDR of 174.3 dB and FoM DR of 175.8 dB. It achieves over 83-dB common-mode rejection ratio (CMRR) and input impedance of 208 M at dc and 31.5 M at the target bandwidth. Moreover, its artifact tolerance is verified by in vitro and i