Highly Efficient Differential Frequency Doubler With Output Resistance Boosting

Abstract

This article presents a differential V-band fre- quency doubler and a D-band frequency quadrupler that use complementary MOS transistors. The frequency doubler is designed to achieve high conversion efficiency (CE) by utilizing the feedback effect due to the gate–drain parasitic capacitance and the series inductor at the gate of the transistors. Capacitors are added to NMOS transistors to alleviate the intrinsic imbal- ances between NMOS and PMOS transistors. The frequency quadrupler is composed