JSSC 2024第3期RF & Wireless40nmLNA

A 5273-GHz LNA With Tri-Coupled Transformer for Gm Boosting and Enhanced Noise C

基于三耦合变压器的宽带低噪声放大器，实现增益提升和噪声抵消。

40nm CMOS, 3.8dB NF, 22.4dB增益, 22.1GHz带宽, 34mW功耗

低噪声放大器三耦合变压器噪声抵消增益提升宽带匹配

▸电路创新：采用单晶体管与三耦合变压器组合，通过变压器耦合实现增益提升和噪声抵消，显著优化了LNA的性能。

▸方法创新：提出了一种新型噪声抵消结构，利用三耦合变压器的独特设计，同时实现噪声降低和增益提升，突破了传统噪声抵消技术的局限。

▸系统创新：宽带匹配设计通过优化变压器耦合参数，实现了从51.6 GHz到73.7 GHz的宽频带匹配，显著提升了LNA的工作带宽和稳定性。

▸性能创新：在40-nm CMOS工艺下，LNA实现了22.4 dB的峰值增益和3.8 dB的最小噪声系数，同时功耗仅为34 mW，展现了优异的能效比。

Abstract

This article presents a broadband low-noise ampli- fier (LNA) based on tri-coupled transformer (XFMR) for Gm boosting and enhanced noise canceling (NC). In contrast to conventional NC structures, the proposed design uses the combi- nation of a single transistor and a tri-coupled XFMR innovatively to achieve noise reduction, Gm boosting, as well as wideband matching, simultaneously. Fabricated in a 40-nm CMOS process, the LNA achieves a 3-dB bandwidth of 22.1 GHz from 51.6 to 73.7 GHz, a peak gai