A GaN-on-Si Gate Driver With Self-Pumped Drive Enhance and Short-Period Negative V oltage Techniques for Reduction of 14.7 × Tailing Power Loss and 37% Reverse Conduction Loss Hsing-Yen Tsai

Abstract

The gallium nitride (GaN)-on-Si low-side gate driver proposed in this article has four main features: First, the self-pumped drive enhance (SPDE) technique achieves fast tran- sients. Second, short-period negative voltage (SPNV) technique avoids the Miller coupling effect and improves efficiency. Third, a dual-mode Voltage regulator ensures sufficient current and minimizes power dissipation. Finally, monolithic low-side gate drivers provide robust drive capability. This work can suppress the ringing caused by high dV/dt of VDS, thereby minimizing the tail time Ttail, achieving a 14.7 × reduction in tailing current loss, suppressing abnormal conduction, and reducing reverse conduction loss by 37.0%.