← 返回 JSSC 论文列表JSSC 2024第4期Power Management180nmNeural Network Accelerator
Monolithic 230-V RMS-to-12-VDC AC–DC Converter at 9 mW/mm 2 Enabled by a 31–325-V DC Input Range Capacitive Multi-Ratio DC–DC Converter Tuur
采用180nm高压SOI CMOS工艺实现的全集成230V交流至12V直流转换器,功率密度达9mW/mm²。
180nm SOI CMOS, 230Vrms输入, 12Vdc输出, 9mW/mm²功率密度, 55.1%效率
高压转换器开关电容全集成SOI工艺功率密度
▸采用低压配置开关并联重构的开关电容DC-DC转换器
▸高效预充电技术保护低压组件
▸集成线性稳压器减少零交叉缓冲电容
Abstract
This article introduces a fully integrated 230- Vrms-to-12-Vdc AC–DC converter implemented in a 180-nm high-voltage CMOS SOI technology. The primary block is a switched-capacitor dc–dc converter (SCC), which is reconfigured by parallelizing stages using low-voltage configuration switches. These configuration switches are connected between internally generated dc nodes that do not swing at the SCC switching frequency, thereby avoiding the periodic charging of the corre- sponding drain capacitances. An efficient pre-charging technique enables this SCC into the ac–dc converter without breaking down its low-voltage components. In addition to the SCC, a linear regulator is incorporated into the ac–dc converter, resulting in a 2× smaller capacitance to buffer the zero crossing. The design also features compact drivers and an efficient resettable capacitive voltage divider for input sensing. The measured power density is 9 mW/mm 2 at 55.1% efficiency, advancing the power density of fully integrated state-of-the-art ac–dc converters by >5000×.