← 返回 JSSC 论文列表
📄 下载 JSSC 原文 PDF
JSSC 2024第5期RF & Wireless45nm SOI CMOSNeural Network Accelerator

RF-to-Millimeter-Wave Receivers Employing Frequency-Translated Feedback Jacob Dean , Student Member , IEEE

本文介绍了一种采用频率转换负反馈的多波段直接下变频接收器。
45nm SOI CMOS, 6-50 GHz, 25-dB增益, 4.1-17-dB噪声系数, 71 mW核心功耗
多波段接收器直接下变频频率转换负反馈可调谐输入匹配非重叠正交LO
创新点1:频率转换负反馈技术(方法创新) - 通过引入频率转换的负反馈路径,实现了宽频带输入匹配和增益稳定性,显著提升了接收器的线性度和噪声性能(NF 4.1–10.5 dB)。
创新点2:可调谐电阻组实现宽频带输入匹配(电路创新) - 采用可调谐电阻组结合四相被动混频器,动态调整输入阻抗,覆盖6-30 GHz和10-50 GHz的超宽频段,支持960 MHz至1375 MHz瞬时带宽。
创新点3:两种非重叠正交LO波形生成方法(系统创新) - 提出两种25%占空比、非重叠正交LO波形生成方案,优化了混频器驱动效率,降低了相位噪声,核心功耗仅71 mW,LO电路功耗48–262 mW。
创新点4:多频段直接下变频架构(系统创新) - 集成LNTA与四相被动混频器的直接下变频结构,实现高增益(>25 dB)和优异线性度(IIP3 -5.4 dBm,IIP2 +16.5 dBm),同时支持毫米波频段扩展。
Abstract
This article presents multi-band direct-conversion receivers (RXs) with frequency-translated negative feedback. The forward path includes a low-noise transconductance ampli- fier (LNTA) followed by four-phase passive mixers that drive baseband amplifiers. A feedback path employs tunable resis- tor banks attached to additional four-phase passive mixers, allowing tunable, frequency-selective input matching around a wide range of local oscillator (LO) frequencies. The passive mixers are driven by 25% duty-cycle, non-overlapping quadra- ture LO waveforms, and two different methods are presented for generating such waveforms. Two RX variants, differing in their LO generation schemes, are fabricated in 45-nm SOI CMOS. The first operates from 6 to 30 GHz, exhibiting greater than 25-dB gain and 4.1–10.5-dB noise figure (NF). A second operates from 10 to 50 GHz, achieving greater than 18-dB gain with 7.1–17-dB NF across the band. For either version, the instantaneous bandwidth is 960 MHz for the highest gain setting and 1375 MHz with reduced gain, measured at 10 GHz LO. The in-band third-order intercept point (IIP3) is −5.4 dBm, the in-band IIP2 is +16.5 dBm, and the out-of-band 1-dB blocker compression is greater than −15 dBm. The RX core consumes 71 mW, while LO circuitry in each variant consumes 48–182 and 72–262 mW from 10 to 50 and 6 to 30 GHz, respectively.