← 返回 JSSC 论文列表JSSC 2024第6期Other0.15µm GaAs pHEMT
An SP10T Switch With Reconfigurable Matching and Symmetrical Routing Topologies Functioning From DC to 18 GHz
一种宽带低插入损耗的SP10T开关,采用三种创新拓扑结构实现从直流到18GHz的优异性能。
0.15-µm GaAs pHEMT, 1.1-3.2dB IL, DC-18GHz BW, >24dB隔离度
SP10T开关可重构匹配对称拓扑宽带低插入损耗
▸采用对称路由结构实现所有路径相似的传输函数,简化阻抗匹配
▸串联传输线-并联单元优化插入损耗和匹配
▸3合1可重构匹配网络适应不同子频段的最佳性能
Abstract
This article presents a broadband single-pole ten- throw (SP10T) switch with a low insertion loss (IL) performance. With the proposed three topologies, the design breaks the constraints between bandwidth (BW) and IL. The proposed three topologies include: 1) employing a one-for-all symmetrically routed structure that achieves similar transfer functions for all pole-to-throw paths, and hence, one matching network covers all branches impedance matching; 2) a series-transmission-line (TL)-shunt unit that optimizes the IL and matching; and 3) a 3-in-1 reconfigurable matching network that varies the conjugate impedance and achieves the best performance for the three subfrequency bands that composes the entire BW. The compact reconfigurable matching network is based on constructing a 50- artificial transmission line (ATL) that compensates all parasitic and redundant components. The proposed reconfigurable SP10T switch is fabricated in a commercial 0.15- µm GaAs pHEMT process. Experimental results show the SP10T switch achieves an impressive wide BW from dc to 18 GHz with a favorable IL of 1.1–3.2 dB. The input P1dB points and IP3 points are better than 21.2 and 35.1 dBm, respectively. The isolation is higher than 24 dB.