Abstract
In this work, five different logic architectures [diode-load (DL), dual-input diode-load (DINP-DL), pseudo- CMOS (P-CMOS), crossover, and differential] for digital circuits in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) technologies are analyzed and compared. Dual- gate self-aligned (DGSA) lab technology is used to process n-type devices with a-IGZO channel on 6-in glass wafers and flexi- ble substrates. Inverters, ring oscillators, and RFID-compatible 12-bit Manchester-encoded code generator circuits, using dif- ferent logic architectures, are designed, processed, and charac- terized. Analyses of unipolar gates are performed to improve the digital design flow for realizing complex digital circuits. A detailed overview compares these logic architectures on differ- ent metrics such as robustness, power consumption, performance, and area with the aim of choosing the most optimal logic to comply with the specifications of targeted applications.