Abstract
In this work, five different logic architectures
[diode-load (DL), dual-input diode-load (DINP-DL), pseudo-
CMOS (P-CMOS), crossover, and differential] for digital circuits
in amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film
transistor (TFT) technologies are analyzed and compared. Dual-
gate self-aligned (DGSA) lab technology is used to process n-type
devices with a-IGZO channel on 6-in glass wafers and flexi-
ble substrates. Inverters, ring oscillators, and RFID-compatible
12-bit Manchest