← 返回 JSSC 论文列表JSSC 2024第6期Power Management180nm
Design of Dual Lower Bound Hysteresis Control in Switched-Capacitor DC–DC Converter for Optimum Efficiency and Transient Speed in Wide Loading Range for IoT Application
提出双下界滞环控制方法,提升SC DC-DC转换器在IoT应用中的效率和响应速度。
180-nm CMOS, 75%效率, 80.4%峰值效率, 80ns响应时间
双下界滞环控制SC DC-DC转换器IoT应用频率控制效率
▸创新点1:双下界滞环控制方法(Dual LBHC)通过两个时钟门控比较器操作实现频率和功率的动态调节,解决了传统SC控制方法在速度和效率之间的权衡问题,确保在宽负载电流范围内保持一致的效率。
▸创新点2:频率独立输出直流电平调节技术通过控制器频率调谐实现系统级快速响应,同时不牺牲稳定性,显著提升了转换器的动态性能(响应时间低至80 ns)。
▸创新点3:基于最大负载电流点的稳定性设计方法通过分析工作原理,确保双LBHC在整个负载范围内的稳定性,为SC转换器的鲁棒性设计提供了理论依据。
▸创新点4:采用180-nm CMOS工艺实现的2:1电容式DC-DC转换器,在0.04至4 mA负载瞬变范围内实现了75%-80.4%的高效率,验证了所提方法的实用性和可扩展性。
Abstract
This article proposes a dual lower bound hysteresis control (LBHC) method with frequency control for the design of switched-capacitor (SC) dc–dc converters in always-on Internet- of-Things (IoT) applications. Conventional SC control methods often face a tradeoff between speed and efficiency. Efficiency is crucial for battery life, while speed is essential for system responsiveness. This article aims to use the proposed method to achieve frequency-independent regulation of the output dc level. This helps achieve a fast response time at the system level by tuning controller frequencies without compromising stability. Furthermore, the proposed dual LBHC loop guides frequency and power scaling, ensuring consistent efficiency over a wide range of load currents through two clock-gated comparator operations per clock cycle. By analyzing the operating principle, this article also discovered that designing the dual LBHC based on its maximum load current point can guarantee its stability over the entire load range. To illustrate this concept, a fully integrated 2:1 capacitive dc–dc converter was implemented using a 180-nm CMOS process. The results demonstrate guaranteed efficiency of at least 75% across load current ranges up to 228×, with a peak efficiency of 80.4%. In addition, an active response time of 80 ns is achieved during load transients ranging from 0.04 to 4 mA.