JSSC 2024第7期RF & Wireless45nm SOIPower Amplifier

A Highly Linear and Efficient V -Band CMOS Power Amplifier Using Hybrid NMOSPMOS

采用混合NMOS/PMOS技术的V波段高效线性CMOS功率放大器

45nm CMOS SOI, 35.4% PAE, 16.3dBm Psat, AM-PM<2°@13.5dBm, EVM<-25dB@64-QAM

V波段CMOS功率放大器非线性抵消分布式有源变压器硅基绝缘体

▸混合NMOS/PMOS技术实现高阶非线性抵消

▸超紧凑差分四路串并联DAT功率合成器

▸仅占用一个变压器面积的输出匹配网络/功率合成器

Abstract

This article presents a V-band (i.e., 47-75 GHz) differential four-way distributed-active-transformer (DAT) power amplifier (PA), which uses hybrid NMOS/PMOS for double nonlinearity cancellation to improve the linearity with minimal impact on the overall PA efficiency. Implemented in the 45-nm CMOS silicon-on-insulator (SOI) process, the proposed PA con- sists of three stages, pre-driver, driver, and PA stages, to deliver the desired gain at the V-band. The PA stage includes both NMOS and PMOS t