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An 8b-Precision 6T SRAM Computing-in-Memory Macro Using Time-Domain Incremental
一种采用时域增量技术的8位精度6T SRAM存内计算宏单元，实现高能效MAC运算。
28nm CMOS, 39.31 TOPS/W能效, 6.6ns计算延迟, 8b-MAC运算, 64次累加/周期, 22b输出精度
存内计算SRAM时域处理能效优化硬件加速
▸时域增量累加(TDIA)方案
▸动态差分参考(D2REF)方案
▸低dMACV感知递归时间数字转换器(LMAR-TDC)
Abstract
This article presents a novel static random access
memory computing-in-memory (SRAM-CIM) structure designed
for high-precision multiply-and-accumulate (MAC) operations
with high energy efficiency (EF), high readout accuracy,
and short compute latency. The proposed device employs
1) a time-domain incremental-accumulation (TDIA) scheme
to enable high-accumulation MAC operations while main-
taining a large signal margin across MAC values (MACVs),
2) a dynamic differential-reference (D2REF) scheme b