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An Ultralow-Power Triaxial MEMS Accelerometer With High-V oltage Biasing and Ele
一种采用高压偏置技术的超低功耗三轴MEMS加速度计,显著提升信噪比并降低功耗。
121µg/√Hz噪声密度, ±1.5g动态范围, <1%线性误差, 184nW/轴功耗(含高压生成)
MEMS加速度计高压偏置超低功耗信噪比优化静电失配补偿
▸采用高压偏置技术提升MEMS信号幅度,避免使用高功耗低噪声放大器
▸通过调节偏置电压消除工艺变异导致的静电失配
▸双芯片设计(MEMS-CMOS集成芯片+纯CMOS芯片)优化系统性能
Abstract
This article presents a triaxial microelectromechani-
cal system (MEMS) capacitive accelerometer using a high-voltage
biasing technique to achieve high resolution with ultralow power.
The accelerometer system generates a differential pair of high
voltages to bias the MEMS structure, raising the MEMS signal
substantially above the noise floor of the analog front-end
(AFE) circuits. With the consequent increased signal-to-noise
ratio (SNR), the proposed accelerometer system eliminates the
need for