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JSSC 2024第7期Other

An Ultralow-Power Triaxial MEMS Accelerometer With High-V oltage Biasing and Ele

一种采用高压偏置技术的超低功耗三轴MEMS加速度计,显著提升信噪比并降低功耗。
121µg/√Hz噪声密度, ±1.5g动态范围, <1%线性误差, 184nW/轴功耗(含高压生成)
MEMS加速度计高压偏置超低功耗信噪比优化静电失配补偿
采用高压偏置技术提升MEMS信号幅度,避免使用高功耗低噪声放大器
通过调节偏置电压消除工艺变异导致的静电失配
双芯片设计(MEMS-CMOS集成芯片+纯CMOS芯片)优化系统性能
Abstract
This article presents a triaxial microelectromechani- cal system (MEMS) capacitive accelerometer using a high-voltage biasing technique to achieve high resolution with ultralow power. The accelerometer system generates a differential pair of high voltages to bias the MEMS structure, raising the MEMS signal substantially above the noise floor of the analog front-end (AFE) circuits. With the consequent increased signal-to-noise ratio (SNR), the proposed accelerometer system eliminates the need for