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JSSC 2024第9期RF & Wireless130nmPhased Array

A 24 to 30-GHz Phased Array Transceiver Front End With 2.8 to 3.1-dB RX NF and 22 to 24% TX

一款24-30GHz相控阵收发前端,采用130nm BiCMOS工艺,支持5G FR2频段,具有高功率效率和低噪声系数。
130nm BiCMOS, 22%-24% TX效率, 2.8-3.1dB RX NF, 15.6-16.2dBm OP1dB, 17.8-18.8dBm PSAT
相控阵收发前端5G FR2BiCMOS功率效率
创新点1:嵌入式天线T/R开关拓扑(方法创新) - 通过将天线开关嵌入到功率放大器(PA)和低噪声放大器(LNA)的匹配网络中,实现了PA和LNA性能的协同优化,同时将插入损耗降至最低(<0.5dB),并显著减小了芯片面积(整体尺寸2.1×0.6mm)。
创新点2:传输线型无源移相器与1位相位反转器(电路创新) - 采用分布式传输线结构实现5.6°高精度相位分辨率,结合1位数字相位反转器提供180°相位切换,在24-30GHz频段内增益波动小于±0.5dB,无需校准即可实现精确波束成形。
创新点3:相位不变可变增益放大器(系统创新) - 创新设计的VGA在8dB增益调节范围内保持相位变化<±1.5°,实现增益控制与相位控制的完全解耦,支持正交锥削和波束导向的独立调控。
创新点4:高温稳定性设计(可靠性创新) - 在105℃高温环境下仍保持发射模式峰值效率>19%(仅下降3%)、接收模式噪声系数<5.1dB,PSAT退化<1dB,满足5G FR2频段的工业级温度稳定性要求。
Abstract
This article presents a compact 24–30-GHz phased array transceiver (TRX) front end (FE) with high transmitter (TX) power efficiency and low receiver (RX) noise figure (NF) in a 130-nm bipolar CMOS (BiCMOS) technology supporting different 5th generation mobile network (5G) frequency range 2 (FR2) bands (n257, n258, and n261). We introduce an embedded antenna TX/RX (T/R) switch (SW) topology to co-optimize the performances of the power amplifier (PA) and the low-noise amplifier (LNA) while minimizing insertion loss and die area. The proposed TRX integrated circuits (ICs) also integrates a transmission line-based passive phase shifter and 1-bit phase inverter for phase control and a phase-invariant variable gain amplifier (VGA) for gain control, enabling orthogonal phase and gain control in the FE. On-wafer measurements of the TRX FE IC at 25 ◦C demonstrate TX mode peak power efficiency of 22%–24% and RX-mode NF of 2.8–3.1 dB, including the impact of the antenna T/R switch. The measured OP1dB and PSAT in the TX mode are 15.6–16.2 and 17.8–18.8 dBm, respectively. RF phase shifting measurements demonstrate <5.6◦ phase resolution with gain variation lower than ±0.5 dB without the need for calibration. We implement phase-invariant gain tunability for orthogonal tapering and beam steering control; the measured phase variation is < ± 1.5◦ for 8-dB gain tuning over 24–30 GHz. The IC was measured at a temperature up to 105 ◦C and maintains TX peak power efficiency > 19% with PSAT degra-