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A Radiation-Hardened 1522-GHz Frequency Synthesizer in 22-nm FinFET David Dolt
22nm FinFET工艺下抗辐射15-22GHz频率合成器设计
22nm FinFET, -240.89dB FoM@15GHz, -64dBc杂散
频率合成器辐射硬化相锁环FinFET空间通信
▸采用抗单粒子翻转(SEU)和总剂量效应(TID)的加固技术
▸在关键PLL模块中实现辐射硬化设计
▸通过重离子和总剂量测试验证辐射耐受性
Abstract
High-speed radiation-hardened frequency synthe-
sizers are a key block in spaceborne communications systems.
This article presents a 15–22-GHz radiation-hardened phase-
locked loop (PLL) designed in a 22-nm FinFET process with
hardening techniques for single-event upset (SEU) and total
ionizing dose (TID) implemented in all key PLL blocks. Electri-
cal performance tradeoffs arising from the radiation-hardening
techniques are discussed and experimentally verified. The PLL
achieves a figure of mer