JSSC 2024第10期Power Management65nm

A BW-Extended Fourth-Order Gain-Boosted N-Path Filter Employing a Switched gmC N

采用开关gm-C网络的带宽扩展四阶增益提升N路径滤波器，具有高线性度和宽通带特性。

65nm CMOS, 10.7-12.7dB增益, 5.3-6.2dB噪声系数, 18.2dBm OOB-IIP3, 50MHz通带带宽, >50dB阻带抑制, 11.1-15.9mW功耗, 0.083mm²面积

N路径滤波器增益提升开关gm-C网络线性度优化带宽扩展

▸采用开关gm-C网络实现四阶响应

▸通过基带多相gm单元平移基带导纳

▸使用类A/B放大器优化线性度

Abstract

This article reports a bandwidth (BW)-extended gain-boosted N-path filter with a switched gm–C network, in which a 4th-order response is achieved with the subtraction method by shifting the baseband (BB) admittance with poly- phase gm cells in the BB. It features not only in-band RF gain and high- Q bandpass response but also other valuable properties, such as a wide passband BW and a high linearity. In addition, a class-A/-B amplifier is employed to provide the RF gain, in which the linearity i