VI C ONCLUSION This article demonstrates a hybrid-integrated 112-Gbs SiPh O-TRX

Abstract

while optimizing power consumption, a 180-nm CMOS SOI MZM and Ge PD are proposed. The integration of these SiPh devices enables a compact form factor and reliable performance. The O-TRX also consists of the four-channel driver and TIA developed on a 180-nm SiGe BiCMOS process. The driver uses a custom-designed second-order AFB CTLE and Ind. PEQ to compensate for channel losses up to 12 dB. The TIA uses a cascaded equalizer embedded in its V ASs to achieve broadband EQ in a co-designed manner. E