JSSC 2024第12期Other0.18µm

A β-Compensated NPN-Based Temperature Sensor With 01 C 3σ Inaccuracy From 55 C

提出一种基于NPN的高精度CMOS温度传感器，采用β补偿技术，实现±0.1°C的精度。

0.18µm CMOS, 1.4-2.2V, 2.5µA, ±0.1°C (3σ), 200fJ·K²

CMOS温度传感器NPNβ补偿动态元件匹配高精度

▸创新点1：β补偿技术（电路创新）：通过引入β补偿技术，有效减少了NPN晶体管基极电流误差，显著提升了温度传感器的精度，使其在-55°C至125°C范围内达到±0.1°C的3σ不准确度。

▸创新点2：连续时间16调制器（电路创新）：采用连续时间16调制器对PTAT和CTAT电流的比值进行数字化处理，提高了信号处理的效率和精度，同时降低了功耗。

▸创新点3：动态元件匹配（系统创新）：通过动态元件匹配技术，有效抑制了元件失配和1/f噪声，进一步提升了传感器的稳定性和测量精度。

▸创新点4：室温数字校准（系统创新）：在室温下对VBE和电阻比进行数字校准，减少了工艺偏差对传感器性能的影响，确保了传感器的高精度和一致性。

Abstract

This article presents a CMOS temperature sensor that achieves both state-of-the-art energy efficiency and accuracy. An NPN-based front end uses two resistors to efficiently generate a PTAT and CTAT current, whose ratio is then digitized by a continuous-time (CT) 16-modulator. A β-compensation tech- nique is used to mitigate base current errors associated with the NPN’s finiteβ. Component mismatch and 1/ f noise are mitigated by applying chopping and dynamic element matching (DEM), while the spre