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A β-Compensated NPN-Based Temperature Sensor With ±0.1 ◦C (3σ ) Inaccuracy From −55 ◦C to 125 ◦C and 200fJ · K2 Resolution FoM Nandor G. Toth
提出一种基于NPN的高精度CMOS温度传感器，采用β补偿技术，实现±0.1°C的精度。
0.18µm CMOS, 1.4-2.2V, 2.5µA, ±0.1°C (3σ), 200fJ·K²
CMOS温度传感器NPNβ补偿动态元件匹配高精度
▸创新点1：β补偿技术（电路创新）：通过引入β补偿技术，有效减少了NPN晶体管基极电流误差，显著提升了温度传感器的精度，使其在-55°C至125°C范围内达到±0.1°C的3σ不准确度。
▸创新点2：连续时间16调制器（电路创新）：采用连续时间16调制器对PTAT和CTAT电流的比值进行数字化处理，提高了信号处理的效率和精度，同时降低了功耗。
▸创新点3：动态元件匹配（系统创新）：通过动态元件匹配技术，有效抑制了元件失配和1/f噪声，进一步提升了传感器的稳定性和测量精度。
▸创新点4：室温数字校准（系统创新）：在室温下对VBE和电阻比进行数字校准，减少了工艺偏差对传感器性能的影响，确保了传感器的高精度和一致性。
Abstract
This article presents a CMOS temperature sensor that achieves both state-of-the-art energy efficiency and accuracy. An NPN-based front end uses two resistors to efficiently generate a PTAT and CTAT current, whose ratio is then digitized by a continuous-time (CT) 16-modulator. A β-compensation tech- nique is used to mitigate base current errors associated with the NPN’s finiteβ. Component mismatch and 1/ f noise are mitigated by applying chopping and dynamic element matching (DEM), while the spread in VBE and the ratio of the two resistors are digitally trimmed at room temperature (RT). Fabricated in a 0.18-µm CMOS process, the sensor draws 2.5 µA from a supply voltage ranging from 1.4 to 2.2 V . Measurements on 40 samples show that it achieves an inaccuracy of ±0.1 ◦C (3σ ) from −55 ◦C to 125 ◦C. Furthermore, it is both highly energy efficient, with a resolution figure of merit (FoM) of 200fJ · K2, as well as very compact, occupying only 0.07 mm 2.