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JSSC 2025第10期Digital Circuits180-nm BCDNeural Network AcceleratorBandgap Reference

A Chopping-Free Single-Trim Bandgap Reference Using Amplifier With PTAT Offset Haoyu Zhuang , Yuntao Cao , Shuguang Han, Siyuan Liu, Yizhan Li, Rongqing Sheng , and

提出一种无斩波单修调带隙基准电路,采用PTAT偏移放大器提高精度。
TC 3–8 ppm/°C, 输出噪声1.5 µVrms, 功耗590 µA, 面积0.55 mm²
带隙基准PTAT偏移单修调无斩波简化电路
创新点1:PTAT偏移放大器(电路创新) - 通过控制基于BJT结构的电流,实现放大器输入偏移电压与温度成正比(PTAT),这一设计不同于传统差分放大器的非PTAT偏移,为后续单修调消除温度误差奠定基础。
创新点2:单修调消除PTAT偏移(系统创新) - 利用PTAT偏移与其他BGR中PTAT误差源的同特性,仅需室温下一次修调即可同时消除所有PTAT误差,无需复杂斩波或自动归零技术,简化系统复杂度并消除高频纹波。
创新点3:简化偏置电路(电路创新) - 提出仅采用尾电阻生成放大器偏置电流的新技术,省去传统复杂偏置电路,进一步降低功耗(590μA)与面积(0.55mm²),提升集成度。
创新点4:高性能指标(系统创新) - 在-55°C~125°C范围内实现3-8ppm/°C的温度系数,0.1-10Hz频段噪声低至1.5μVrms,综合精度与噪声性能达到行业领先水平。
Abstract
This article presents a chopping-free single-trim bandgap reference with an amplifier proportional-to-absolute- temperature (PTAT) offset. This amplifier PTAT offset is helpful for improving the BGR accuracy. Unlike the classic differential amplifiers, whose input-referred offset is usually non-PTAT, the proposed amplifier realizes a PTAT offset through controlling the current of a BJT-based structure. Similar to other PTAT error sources in a bandgap reference, this PTAT offset can be eliminated easily through a single room-temperature trim at the reference voltage. This makes the proposed circuit very simple and highly accurate, since it eliminates the need of complicated amplifier-offset cancellation techniques, such as chopping or autozeroing, that are usually used in prior single-trim bandgap reference circuits. It also eliminates the high-frequency ripple at the reference output, due to the no need of chopping. Besides the proposed structure, this article also presents a new technique to generate the amplifier bias current using only a tail resistor. Since a complicated biasing circuit is no longer needed, the proposed circuit is further simplified. Implemented in a 180-nm BCD process, the temperature coefficient (TC) is 3–8 ppm/ ◦C at −55 ◦C∼125 ◦C after a single trim at the room temperature, the output noise is only 1.5 µVrms at 0.1–10 Hz, the current consumption is 590 µA, and the active area is 0.55 mm 2. According to the best of our knowledge, this is the first ever