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JSSC 2025第10期Digital Circuits65nm

An 8.62-µW 75-dB DR SoC Fully Integrated SoC for Spoken Language Understanding

一款超低功耗全集成语音理解SoC,具备75dB动态范围和92.9%识别准确率
65nm CMOS, 8.62μW功耗, 2.23mm²面积, 93dB DR(特征提取器), 92.9%准确率
语音理解动态范围自动增益控制RNN加速器硬件感知训练
采用全局/通道自动增益控制扩展动态范围
利用时序稀疏性和池化技术降低RNN加速器功耗2.3倍
结合硬件感知训练与行为模型克服芯片间差异
Abstract
We present a sub-10-µW fully integrated SoC for on- device spoken language understanding (SLU). Its analog feature extractor (FEx) applies global and per-channel automatic gain control (AGC) to extend the system’s dynamic range (DR)—a critical requirement for real-world scenarios, including far-field operations. The on-chip streaming-mode recurrent neural net- work (RNN) accelerator exploits temporal sparsity and pooling, reducing its power by 2 .3×. By combining hardware-aware training with a behavioral model of the FEx that captures circuit nonidealities, the network is trained to maintain SLU accuracy despite chip-to-chip variation. Fabricated in a 65-nm CMOS process, the SoC occupies 2.23 mm 2 and consumes 8.62 µW for end-to-end SLU. The 16-channel FEx achieves 93-dB DR while dissipating 1.85 µW at 100-Hz feature frame rate. The SoC is evaluated on the 32-class Fluent Speech Commands dataset (FSCD), achieving 92.9% accuracy for 2.8-mV rms inputs while maintaining >85% accuracy over a 75-dB input range.