← 返回 JSSC 论文列表JSSC 2025第10期Memory
An Analog Neuromorphic On-Chip Training System With IGZO TFT-Based 6T1C Synaptic Memory
提出基于IGZO TFT的6T1C突触结构模拟神经形态芯片训练系统,实现高效多比特状态存储。
367 distinct states, R2=0.99, ENOB=8.95, 97.1% MNIST accuracy
IGZO TFT6T1C突触模拟神经形态芯片上训练MNIST
▸采用IGZO TFT突触单元实现低漏电流多比特状态存储
▸6T1C结构实现高线性度367个状态
▸首次实现模拟芯片上训练,MNIST准确率97.1%
Abstract
This article proposes an analog synapse-based neu- romorphic on-chip training system that uses emerging indium gallium zinc oxide (IGZO) thin film transistor (TFT) synapse cells to store multi-bit states for deep neural networks (DNNs). IGZO TFT demonstrates extremely low leakage currents, preserving the charge stored in capacitors during prolonged training periods. The 6 transistor 1 capacitor (6T1C) structure, characterized by its symmetrical design and current sources configuration, achieves an average of 367 distinct states with high linearity, reflected by an R2 value of 0.99 through a neuron circuit. By adjusting currents and capacitor sizes, the system effec- tively integrates currents from both individual synapses and the overall array. Additionally, the neuron circuit, implemented separately from the IGZO TFT synapse array, demonstrates an 8.95 effective number of bits (ENOB) in overall performance measurements. The neuron circuit and IGZO TFT array have areas of 7.2 and 10.2 mm 2, respectively. Using the proposed neuromorphic system with the 6T1C memory structure, we suc- cessfully conducted the first analog on-chip training with the last layer, achieving an accuracy of 97.1% on the MNIST dataset.