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JSSC 2025第12期Clocking & PLLs22nm FDSOIPLLCrystal Oscillator

A 4.6-GHz 54.5-fs rms PLL-XO Co-Design Featuring a Pulse-Injection XO Driver

一种46GHz低抖动PLL-XO协同设计,采用脉冲注入XO驱动技术
4.6GHz, 545fs rms抖动, 7.24mW功耗
PLL晶体振荡器低抖动脉冲注入相位噪声
创新点1:PLL与XO协同设计(系统创新):通过PLL的高精度相位控制与XO的低噪声特性结合,利用PLL输出在低ISF点精确注入能量,显著降低系统整体相位噪声,实现545-fs rms的超低抖动性能。
创新点2:脉冲注入XO驱动技术(电路创新):采用脉冲注入式驱动电路,仅在低ISF时间窗口激活能量注入,提升XO品质因数(Q)的同时将驱动功耗降至1.92mW,面积仅占0.014mm²。
创新点3:低回踢参考缓冲器(电路创新):创新性使用级联晶体管结构抑制缓冲器开关回踢效应,将参考杂散降至-71dBc,同时降低缓冲器引入的附加相位噪声。
创新点4:全系统能效优化(系统创新):通过协同设计实现7.24mW总功耗下-256.7dB的FoM,整合PLL/XO/缓冲器贡献,在4.6GHz高频段达成54.5fs集成抖动。
Abstract
This article presents a power-e fficient and low-jitter frequency generation and synthesis architecture that leverages a phase-locked loop (PLL) and crystal oscillator (XO) co-design, integrated with a pulse-injection XO driver. The proposed co- design exploits the low-jitter and fine phase resolution of the PLL output to inject energy into the XO precisely at low-impulse- sensitivity-function (ISF) points, enhancing XO performance and subsequently reducing the in-band phase noise of the PLL. In addition, a low-kickback reference buffer is introduced, utilizing a cascoded transistor to mitigate buffer-induced switching kickback and further suppress bu ffer phase noise. Fabricated in a 22- nm FDSOI process, the prototype occupies an active area of 1.14 mm 2, with the pulse-injection driver consuming only 0.014 mm2. The measured integrated jitter from 1 kHz to 100 MHz is 54.5 fs rms at 4.6 GHz, while the reference and second harmonic spurs are −71 and −70.4 dBc, respectively. The complete system consumes 7.24 mW, including 1.92 mW for the pulse-injection driver, and achieves a jitter figure-of-merit (FoM) of −256.7 dB, capturing the combined contributions of the PLL, XO, and reference buffer.