Abstract
This article presents a gallium nitride (GaN) solid-
state power amplifier (SSPA) operating in the G band and
delivering watt-level output power. To enhance the performance
of the 2 × 20 µm GaN high electron mobility transistors
(GaN HEMTs), AlN /GaN heterojunction, n + GaN regrown, and
50-nm floating T-gate are employed with a transconductance
of 880 mS /mm and an f T ( f max) of 180 GHz (420 GHz). By
utilizing multiband large-signal impedance correction technology,
the optimal power matching imp