ISSCC 2011
Session 23
Image Sensors
An 80µVrms-Temporal-Noise 82dB-Dynamic-Range CMOS Image Sensor with a 13-to-19b VariableResolution Column-Parallel FoldingIntegration/Cyclic ADC
Taishi Takasawa1, Tomoyuki Akahori2, Keigo Isobe2, Takashi Watanabe2, Shinya Itoh1, Shoji Kawahito1,2 1 Shizuoka University, Hamamatsu, Japan, Brookman Technology, Hamamatsu, Japan, 3 Sanei Hytechs, Hamamatsu, Japan 2 Lo
ISSCC 2011
Session 23
Image Sensors
An APS-C Format 14b Digital CMOS Image Sensor with a Dynamic Response Pixel
Toshiaki Sato2, Tim Bales3, Katsuyuki Kawamura2, Eduard Pages2, Shinichiro Matsuo2, Tetsuji Kawaguchi2, Tadashi Sugiki2, Norio Yoshimura2, Junichi Nakamura2, John Ladd1, Zhiping Yin1, Russell Iimura1, Xiaofeng Fan1, Scot
ISSCC 2011
Session 23
Image Sensors
A 17.7Mpixel 120fps CMOS Image Sensor with 34.8Gb/s Readout
Hiroyuki Iwaki1, Yuji Gendai1, Hirotaka Murakami1, Kenichi Takamiya2, Hiroshi Shiroshita1, Yoshinori Muramatsu1, Toshihiro Furusawa1 1 Sony, Kanagawa, Japan, Sony LSI Design, Kanagawa, Japan 2 Recently, the demands to ac
ISSCC 2011
Session 23
Image Sensors
A Sub-Electron Readout Noise CMOS Image Sensor with Pixel-Level Open-Loop Voltage Amplification
CSEM, Zurich, Switzerland, 3 CSEM, Landquart, Switzerland, 4 EPFL, Neuchâtel, Switzerland The conversion factor used to calculate the equivalent noise charge is determined by a photon transfer curve measurement. Investig
ISSCC 2011
Session 23
Image Sensors
A 320×256 90dB SNR and 25µm-Pixel-Pitch Infrared Image Sensor
cooled Infrared (IR) HgCdTe (Mercury Cadmium Telluride) hybrid sensors (detector bump-bounded over the CMOS IC) are very demanding in term of SNR (typical state-of-the-art values are in the 70to-80dB range [1,2]). Consid
ISSCC 2011
Session 23
Image Sensors
A 16 Mfps 165kpixel Backside-Illuminated CCD
Masatoshi Tanaka1, Kohsei Takehara1, Tomoo Okinaka1, Harry van Kuijk2, Wilco Klaassens2, Jan Bosiers2, Michael Lesser3, David Ouellette3, Hirotaka Maruyama4, Tetsuya Hayashida4, Toshiki Arai4 1 Kinki University, Higashi-
ISSCC 2011
Session 23
Image Sensors
A 300mm Wafer-Size CMOS Image Sensor with In-Pixel Voltage-Gain Amplifier and Column-Level Differential Readout Circuitry
Masato Fujita, Satoshi Hirayama, Taikan Kanou, Sakae Hashimoto, Genzo Momma, Shunsuke Inoue Canon, Kawasaki, Japan Large-format image sensors provide us with a new form of vision in several areas such as astronomy and in
ISSCC 2011
Session 23
Image Sensors
A 128×96 Pixel Event-Driven Phase-Domain ΔΣBased Fully Digital 3D Camera in 0.13µm CMOS Imaging Technology
University of Edinburgh, Edinburgh, United Kingdom, STMicroelectronics, Edinburgh, United Kingdom Low-cost 3D image capture devices are enabling new applications in the gaming, robotics, automotive and surveillance indus
ISSCC 2011
Session 23
Image Sensors
An Angle-Sensitive CMOS Imager for Single-Sensor 3D Photography
Conventional cameras capture 2D photographs at a single plane of focus. Acquisition of a 3D photograph with multiple planes of focus typically requires scanning the focus of a single camera [1], or using arrays of camera
ISSCC 2011
Session 23
Image Sensors
A 1/13-inch 30fps VGA SoC CMOS Image Sensor with Shared Reset and Transfer-Gate Pixel Control
T. Willassen1, S. Skaug1, T. Martinussen1, D. Whittlesea2, G. Ali3, J. Ladd3, X. Li3, S. Johnson3, V. Rajasekaran3, Y. Lee4, J. Bai3, M. Flores3, G. Davies2, H. Samiy2, A. Hanvey2, D. Perks2 1 Aptina, Oslo, Norway, Aptin
ISSCC 2011
Session 23
Image Sensors
A 1/2.33-inch 14.6M 1.4µm-Pixel BacksideIlluminated CMOS Image Sensor with Floating Diffusion Boosting
Younghwan Park1, Taesub Jung1, Youngheup Jang1, Bumsuk Kim1, Yitae Kim1, Shay Hamami2, Uzi Hizi2, Mickey Bahar2, Changrok Moon1, JungChak Ahn1, Duckhyung Lee1, Hiroshige Goto1, Yun-Tae Lee1 1 Samsung Electronics, Yong-In
ISSCC 2011
Session 24
Other
A 40nm Wideband Direct-Conversion Transmitter
digital devices such as cameras, media players and high-definition TVs has seen a significant growth. This requires tuners for home networking such as MoCA with increasingly large bandwidth. Though advanced CMOS technolo
ISSCC 2011
Session 24
AI / ML
A Flip-Chip-Packaged 1.8V 28dBm Class-AB Power Amplifier with Shielded Concentric Transformers in 32nm SoC CMOS
Intel, Hillsboro, OR As CMOS technology continues to scale for SoC applications, significant challenges to implement a monolithic linear high-power amplifier have emerged. This results from the low breakdown voltage of t
ISSCC 2011
Session 24
Other
A Switched-Capacitor Power Amplifier for EER/Polar Transmitters
Wireless high-speed communication standards such as WiFi, WiMax and LTE use spectrally-efficient OFDM modulation that encodes signal information in both amplitude and phase. Use of this non-constant envelope modulation r
ISSCC 2011
Session 24
Other
An EDGE/GSM Quad-Band CMOS Power Amplifier
Samsung Electro-Mechanics, Atlanta, GA Although Si CMOS PAs for mobile applications have demonstrated specificationcompliant performance over the last several years, Si CMOS has not been widely employed in cellular PA ap
ISSCC 2011
Session 24
Other
A Compact 1V 18.6dBm 60GHz Power Amplifier in 65nm CMOS
One of the remaining challenges in implementing CMOS 60GHz radios is to cover longer communication distance as the high path loss at mm-Wave frequencies demands higher EIRP, which in turn requires considerable design eff
ISSCC 2011
Session 25
Wireline I/O
A 5Gb/s Adaptive DFE for 2× Blind ADC-Based CDR in 65nm CMOS (αi, αi+4) are provided to the DFE to be subtracted from the two adjacent samples of ADC, which are ½ UI apart.
For this PD, a triangular waveform is the ideal waveform as its interpolated zerocrossings coincide with the actual zero-crossings. Figure 25.1.3 shows how the amplitude of the desired waveform is generated. Two adjacent
ISSCC 2011
Session 25
Wireline I/O
A 0.5-to-2.5Gb/s Reference-less Half-Rate Digital CDR with Unlimited Frequency Acquisition Range and Improved Input Duty-Cycle Error Tolerance
acquisition range offer flexibility in optical communication networks, help reduce link power through activity-based rate adaptation, and minimize cost with a single-chip multi-standard solution. Extracting the bit rate
ISSCC 2011
Session 25
Wireline I/O
A TDC-less 7mW 2.5Gb/s Digital CDR with Linear Loop Dynamics and Offset-Free Data Recovery
A clock and data recovery (CDR) circuit is the key building block in all serial communication systems. A classical CDR is implemented using a Type-2 phaselocked loop (PLL) wherein a passive lead-lag analog loop filter is
ISSCC 2011
Session 25
Wireline I/O
A Digital Wideband CDR with ±15.6kppm Frequency Tracking at 8Gb/s in 40nm CMOS
Seong-Ho Lee1, Hamid Hatamkhani1, Mario Caresosa1, Karo Khanoyan1, Haitao Tong1, Duke Tran1, Anthony Brewster1, Ichiro Fujimori1 1 2 Broadcom, Irvine, CA Broadcom, Austin, TX It has been well understood that the digital
ISSCC 2011
Session 25
Wireline I/O
A 20Gb/s Digitally Adaptive Equalizer/DFE with Blind Sampling
As data rates increase, the backplane communication systems suffer from serious inter-symbol interference (ISI). Due to different channel lengths, loss, and environment variations, an adaptive equalizer is an attractive
ISSCC 2011
Session 25
Wireline I/O
A 15Gb/s 0.5mW/Gb/s 2-Tap DFE Receiver with Far-End Crosstalk Cancellation
The increasing demand for high-bandwidth interconnection between integrated circuits requires large numbers of I/Os per chip as well as high data rates per I/O. Key limitations in meeting these requirements include chann
ISSCC 2011
Session 25
Wireline I/O
A 10Gb/s Half-UI IIR-Tap Transmitter in 40nm CMOS
Netlogic Microsystems, Santa Clara, CA Two commercially important standards for 10Gb/s serial data transfer include the SFI specification, associated with SFP+ optical modules and copper twinaxial cable [1], and the 10GB
ISSCC 2011
Session 25
Wireline I/O
A 13.8mW 3.0Gb/s Clock-Embedded Video Interface with DLL-Based Data-Recovery Circuit
As the panel technology continues to offer displays with higher resolution, greater color depth, and increased frame rate, the amount of video data to display driver ICs (DDIs) inside the panel keeps on expanding. Since
ISSCC 2011
Session 26
Wireless
A 7.9µW Remotely Powered Addressed Sensor Node Using EPC HF and UHF RFID Technology with -10.3dBm Sensitivity
Hartwig Unterassinger1, Günter Hofer2, Michael Klamminger1, Wolfgang Pribyl1, Gerald Holweg2 1 2 Graz University of Technology, Graz, Austria, Infineon Technologies, Graz, Austria The combination of remote powering and w
ISSCC 2011
Session 26
Wireless
An Isolator-less CMOS RF Front-End for UHF Mobile RFID Reader
research on how to guarantee a reliable RX performance under simultaneous TX/RX operation. To isolate RX from the TX self-jammer, the RFID transceivers are generally accompanied by an off-chip circulator or isolator. Thi
ISSCC 2011
Session 26
Wireless
A 2.4GHz ULP OOK Single-Chip Transceiver for Healthcare Applications
Simonetta Rampu1, Cui Zhou1, Li Huang1, Koji Imamura2, Ben Busze1, Frank Bouwens1, Mario Konijnenburg1, Juan Santana1, Arjan Breeschoten1, Jos Huisken1, Guido Dolmans1, Harmke de Groot1 1 2 Holst Centre / imec, Eindhoven
ISSCC 2011
Session 26
Wireless
A 120µW MICS/ISM-Band FSK Receiver with a 44µW Low-Power Mode Based on Injection-Locking and 9x Frequency Multiplication
For true low-power peer-to-peer wireless links for sensing, link symmetry must be maintained unlike in [1,2] where the burden is shifted to the receiver. In addition, the transceiver power dissipation and performance sho
ISSCC 2011
Session 26
Wireless
A GPS/Galileo SoC with Adaptive In-Band Blocker Cancellation in 65nm CMOS
Kuan-I Li1, Jui-Lin Hsu1, Chi-Lun Lo1, Hsin-Hua Chen1, Sheng-Yuan Su1, Kun-Tso Chen1, Min Chen1, Osama Shana’a2, Shu-Hung Chou1, George Chien3 1 3 MediaTek, Hsinchu, Taiwan, 2MediaTek, Singapore, Singapore, MediaTek, San
ISSCC 2011
Session 26
Wireless
A 0.05-to-10GHz 19-to-22GHz and 38-to-44GHz SDR Frequency Synthesizer in 0.13µm CMOS
Extensive research has been focused on generating LO signals for softwaredefined radios (SDRs) with ultra-wide tuning range over several frequency decades and sufficiently high spectrum purity to support diverse wireless
ISSCC 2011
Session 26
Wireless
A 4.6GHz MDLL with -46dBc Reference Spur and Aperture Position Tuning
University of California, Los Angeles, CA, Oracle, Menlo Park, CA 2 Multiplying delay-locked loops (MDLLs) [1-5] have been shown to have improved jitter accumulation and tracking over VCO-based PLLs. By injecting the ref
ISSCC 2011
Session 27
Data Converters
A 4GHz CT ΔΣ ADC with 70dB DR and –74dBFS THD in 125MHz BW
2 NXP Semiconductors, Eindhoven, The Netherlands Delft University of Technology, Delft, The Netherlands In this paper, a high-speed continuous-time (CT) ΔΣ ADC topology is proposed that absorbs the pole normally caused b
ISSCC 2011
Session 27
Data Converters
An 8mW 50MS/s CT ΔΣ Modulator with 81dB SFDR and Digital Background DAC Linearization
There is ongoing effort to realize low-power ΔΣ ADCs with more than 10MHz bandwidth (BW) – especially for wireless transceivers. Besides the trend to make these ADCs more reconfigurable [1], recent advances in the design
ISSCC 2011
Session 27
Data Converters
A Third-Order DT ΔΣ Modulator Using Noise-Shaped Bidirectional Single-Slope Quantizer
The aspirations for power efficient ADCs have led to many improvements in this area. In delta-sigma modulators, techniques such as VCO-based quantizer [1, 2] and time-domain quantization [3] have been proposed to enhance
ISSCC 2011
Session 27
Data Converters
A 250mV 7.5µW 61dB SNDR CMOS SC ΔΣ Modulator Using a Near-Threshold-Voltage-Biased CMOS Inverter Technique
One of the most continuous trends in solid-state circuits is the decrease in power supply as a direct consequence of technology scaling. The fact that Vt does not scale linearly with supply voltage has encouraged several
ISSCC 2011
Session 27
Data Converters
A 84dB SNDR 100kHz Bandwidth Low-Power Single Op-Amp Third-Order ΔΣ Modulator Consuming 140µW
This third-order ΔΣ modulator [1, 2], suitable for high-resolution low-power sensor systems, consumes 140µW to obtain 84dB SNDR with OSR=16 and 100kHz signal bandwidth. The achieved FoM is 54fJ/conversion-step The DACs u
ISSCC 2011
Session 27
Data Converters
A 1.7mW 11b 1-1-1 MASH ΔΣ Time-to-Digital Converter
SCK-CEN, Mol, Belgium 3 KH Kempen, Geel, Belgium The frequency of the relaxation oscillator can be expressed as IREF/(VREF·2C). By correlating VREF and IREF as VREF = IREF·R, its frequency becomes only dependant on passi
ISSCC 2011
Session 27
Data Converters
A 120dB-SNR 100dB-THD+N 21.5mW/Channel Multibit CT ΔΣ DAC
Analog Devices, Wilmington, MA Automotive and consumer multi-channel 24b audio systems have demanded low-cost digital-to-analog converters (DACs) which offer wide dynamic range, high linearity, small die size, and low po
ISSCC 2011
Session 27
Data Converters
A 108dB-DR 120dB-THD and 0.5Vrms Output Audio DAC with Inter-Symbol-Interference-Shaping Algorithm in 45nm CMOS
fine-resolution quantization to reduce the out-of-band noise (OBN), reduce jitter sensitivity, and simplify analog filtering. Recent techniques achieve this goal by using a mix of DAC elements with different weights, e.g
ISSCC 2011
Session 3
RF & Wireless
Spur-Free All-Digital PLL in 65nm for Mobile Phones
all-digital PLL (ADPLL) [1] for Bluetooth radios has proven benefits of CMOS scaling and integration, demonstrators for more challenging wireless standards have emerged [2-6]. In the ADPLL, however, the digitallycontroll
ISSCC 2011
Session 3
RF & Wireless
A 5.3GHz Digital-to-Time-Converter-Based Fractional-N All-Digital PLL
Advanced deep-submicron CMOS processes are well-suited for a digital implementation of phase-locked loop-(PLL) based frequency synthesizers. Recently, several RF all-digital phase-locked loops (ADPLL) have been reported
ISSCC 2011
Session 3
RF & Wireless
A 2.5GHz 32nm 0.35mm2 3.5dB NF -5dBm P1dB Fully Differential CMOS Push-Pull LNA with Integrated 34dBm T/R Switch and ESD Protection
Intel, Hillsboro, OR Process scaling enables SoC integration of radio and large digital systems at reduced cost and area. Furthermore, the crowded spectrum requires high linearity receivers to enable co-existence in the
ISSCC 2011
Session 3
RF & Wireless
A 65nm CMOS Pulse-Width-Controlled Driver with 8Vpp Output Voltage for Switch-Mode RF PAs up to 3.6GHz
Melina Apostolidou2, Leo C.N. de Vreede1, Domine Leenaerts2, Jan Sonsky3 1 Delft University of Technology, Delft, The Netherlands, NXP Semiconductors, Eindhoven, The Netherlands, 3 NXP-TSMC Research Center, Leuven, Belgi
ISSCC 2011
Session 3
RF & Wireless
A Low-Power Process-Scalable Superheterodyne Receiver with Integrated High-Q Filters
low-IF, benefitting from a simple structure, and a high level of integration as image rejection is not a major concern, and channel selection is performed by low-frequency lowpass filters [Fig. 3.5.1(a)]. Dominated by li
ISSCC 2011
Session 3
RF & Wireless
A 40nm CMOS Highly Linear 0.4-to-6GHz Receiver Resilient to 0dBm Out-of-Band Blockers
reconfigurability to replace any standard radio: they develop toward systems where a simplified antenna interface can be used, with most dedicated filtering removed. This requires a receiver accommodating much higher lin
ISSCC 2011
Session 3
RF & Wireless
A 1.0-to-4.0GHz 65nm CMOS Four-Element Beamforming Receiver Using a Switched-Capacitor Vector Modulator with Approximate Sine Weighting via Charge Redistribution
Frank E. van Vliet1,2 1 University of Twente, Enschede, The Netherlands, TNO Science and Industry, The Hague, The Netherlands 2 Phased-array receivers provide two major benefits over single-antenna receivers
ISSCC 2011
Session 3
RF & Wireless
A Harmonic Rejection Mixer Robust to RF Device Mismatches
shown in Fig. 3.8.4. Loop Gain of this buffer at the low IF frequency helps to significantly reduce its gain and phase errors. Gains proportional to sine-wave coefficients are set by conductances proportional to sine-wav
ISSCC 2011
Session 4
Digital Processors
A 5.2GHz Microprocessor Chip for the IBM zEnterpriseTM System
M.J. Saccamango2, F. Malgioglio2, P. Meaney2, D. Plass2, Y.-H. Chan2, M. Mayo2, G. Mayer4, L. Sigal5, D. Rude2, R. Averill2, M. Wood2, T. Strach4, H. Smith2, B. Curran2, E. Schwarz2, L. Eisen3, D. Malone2, S. Weitzel3, P
ISSCC 2011
Session 4
Digital Processors
Dynamic Hit Logic with Embedded 8Kb SRAM in 45nm SOI for the zEnterpriseTM Processor
logic functions are making their way onto critical path SRAMs in the L1 cache look up structure. Described in this paper is a 14 bit dynamic hit logic scheme with an embedded 8K bit SRAM in IBM’s 45nm SOI [3]. The hit lo
ISSCC 2011
Session 4
Digital Processors
A 32nm Westmere-EX Xeon® Enterprise Processor
of 10 Westmere 32nm cores [2] and a shared inclusive L3 cache (LLC) integrated on a monolithic die, with link-based I/Os. This paper focuses on the innovations and circuit optimizations over the predecessor [3] targeting