ISSCC 2018
Session 24
Other
A Fully Integrated Three-Level 11.6nC Gate Driver Supporting GaN Gate Injection Transistors
Leibniz University Hannover, Hannover, Germany 1 2 Due to their superior fast-switching performance, GaN transistors show enormous potential to enable compact power electronics in applications like renewable energy, elec
ISSCC 2016
Session 12
Power Management
A 10mW Fully Integrated 2-to-13V-Input BuckBoost SC Converter with 81.5% Peak Efficiency
In recent years, significant progress has been made on switched-capacitor DC-DC converters as they enable fully integrated on-chip power management. New converter topologies overcame the fixed input-to-output voltage lim