A Fully Integrated Three-Level 11.6nC Gate Driver Supporting GaN Gate Injection Transistors

📋 论文概要

该论文提出了一种全集成三电平栅极驱动器，支持GaN门极注入晶体管，解决了因GaN低阈值电压导致的意外导通问题。通过三电平驱动方案，实现了11.6nC的驱动能力，提升了开关可靠性和效率。

💡 主要创新点

• 提出全集成三电平栅极驱动器架构，有效抑制GaN晶体管因耦合导致的误开启。
• 支持GaN门极注入晶体管，优化驱动电荷传输，实现11.6nC的高驱动能力。

🏷 关键词

📄 原文摘要

Leibniz University Hannover, Hannover, Germany 1 2 Due to their superior fast-switching performance, GaN transistors show enormous potential to enable compact power electronics in applications like renewable energy, electrical cars and home appliances by shrinking down the size of passives. However, fast switching poses challenges for the gate driver. Since GaN transistors have a low threshold voltage Vt of ~1V, an unintended driver turn-on can occur in case of a unipolar gate control as shown for a typical halfbridge in Fig. 24.2.1 (top left). This is due to coupling via the gate-drain capacitance (Miller coupling), when the low-side driver turns on, causing a peak current into the gate. This is usually tackled by applying a negative gate voltage to enhance the safety margin towards Vt, resulting in a bipolar gate-driving scheme. In many power-electronics applications GaN transistors operate in

👥 作者与机构

Achim Seidel1, Bernhard Wicht1,2

Reutlingen University, Reutlingen, Germany