A 410GHz CMOS Push-Push Oscillator with an OnChip Patch Antenna

📋 论文概要

该论文提出了一种采用标准CMOS工艺实现的410GHz推推振荡器，并在同一芯片上集成了贴片天线。它旨在解决太赫兹频段信号源的高成本和复杂性问题，为太赫兹系统提供紧凑、低成本的CMOS解决方案。

💡 主要创新点

• 首次在标准CMOS工艺中实现410GHz推推振荡器，达到太赫兹频段。
• 将贴片天线与振荡器集成在同一芯片上，实现片上天线，减小系统尺寸。
• 采用推推结构（push-push）从基波二次谐波提取信号，降低对高频器件的依赖。

🏷 关键词

📄 原文摘要

David B. Tanner1, Chih-Ming Hung3, Kenneth K. O1 1 Univeristy of Florida, Gainesville, FL, 2NXP Semiconductors, Austin, TX Texas Instruments, Dallas, TX 3 The uses of terahertz systems (300GHz to 3THz) in radars, remote sensing, advanced imaging, and bio-agent and chemical detection [1, 2] have been extensively studied. A compact and low-cost signal source is a key circuit block of terahertz systems. Traditionally, the circuits have been built using highly optimized III-V technologies [3, 4]. With the advances of CMOS, it has become realistic to consider terahertz circuits in CMOS. This paper reports a signal source operating near 410GHz that is fabricated using low-leakage transistors in a 6M 45nm digital CMOS technology. The maximum oscillation frequency is limited by the unity maximum available power gain frequency, fmax of a transistor. To obtain even higher frequencies, the push-push oscillator architecture [5,

👥 作者与机构

Eunyoung Seok1, Changhua Cao1,2, Dongha Shim1, Daniel J. Arenas1,