⚡ 本页包含 AI 生成的分析内容，仅供参考
提出了一种采用Class-C偏置的差分Colpitts CMOS VCO，通过交叉耦合MOS晶体管显著改善相位噪声性能。实现了1.4mW功耗、4.90-5.65GHz调谐范围，平均FoM达194.5dBc/Hz。
properties; yet, a differential CMOS Colpitts oscillator, directly derived from a singled-ended topology, did not show a better phase noise performance than the conventional CMOS differential-pair LC-tank oscillator, not even theoretically [1]. Fortunately, we can greatly improve the phase-noise performance of a differential Colpitts oscillator by cross-coupling the MOS transistors as shown in Fig. 26.2.1, where k is a positive constant; in this case, one can prove (making use of the same analysis followed in [1]) that the phase-noise expression is given by (1) in Fig. 26.2.2, from which it can be immediately verified that the phase noise is minimum for n=0, where n=C1/(C1+C2). If we assume k=1, which is the simplest choice, it can be shown that the ratio of the effective
Andrea Mazzanti1, Pietro Andreani2, 1
University of Modena and Reggio Emilia, Modena, Italy Lund University, Lund, Sweden 2 Colpitts oscillators have long been known for their excellent phasenoise