A CMOS Temperature-to-Digital Converter with an Inaccuracy of ±0.5°C (3σ) from –55 to 125°C

📋 论文概要

该论文提出了一种基于热扩散率传感的CMOS温度-数字转换器，无需片外模拟元件，在-55至125°C范围内实现了±0.5°C（3σ）的未校准器件间精度，解决了传统带隙温度传感器受工艺偏差影响的问题。

💡 主要创新点

• 利用硅体热扩散率对工艺不敏感的特性实现温度传感，无需校准即可获得高精度。
• 完全集成于CMOS工艺，无需片外模拟元件，且输出为数字信号，线性度优于传统方案。
• 工作温度范围扩展至-55至125°C，覆盖军用温度范围。

🏷 关键词

📄 原文摘要

This paper describes a CMOS temperature-to-digital converter (TDC) based on thermal diffusivity sensing, which is an interesting alternative to conventional band-gap temperature sensors because the thermal diffusivity of bulk silicon is insensitive to process spread. Compared to previous work [1, 2], this converter does not require off-chip analog components, operates over a wider temperature range and has a digital output. Furthermore, its output is a much more linear function of temperature. The TDC has an untrimmed device-to-device spread of ±0.5°C (3σ) over the military temperature range (–55 to 125°C). The thermal diffusivity of silicon, D, is temperature dependent and can be approximated by D ∝ 1/Tn (n ≈ 1.8) over the military temperature range [1]. D can be measured via the phase shift of an electrothermal filter (ETF), which consists of a heater and a thermopile realized in the substrate of a silicon chip. Figure 32.1.1

👥 作者与机构

C. P. L. van Vroonhoven, K. A. A. Makinwa

Delft University of Technology, Delft, The Netherlands