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该论文提出了一种用于电容式MEMS加速度计的斩波稳定接口电路,采用0.6µm CMOS工艺中的横向双极型晶体管(BJT)作为输入级,以降低低频闪烁噪声。实现了接近直流的微重力分辨率,满足了高精度惯性导航等应用需求。
There has been increasing demand for low-cost small-size highprecision MEMS accelerometers with micro-gravity resolution at very low frequencies in applications ranging from GPS-augmented inertial navigation to distance measurement systems [1]. The resolution of capacitive micro-g accelerometers interfaced with lowcost CMOS circuits is typically limited by the flicker noise of the input transistors at very low frequencies. Although there have been a few reports of micro-g resolution at input frequencies higher than 10Hz [1-4], achieving near DC micro-g resolution has proven to be difficult with small-size micromechanical sensors suitable for consumer applications. We present a prototype lateralPNP (LPNP) BJT interface IC for an SOI capacitive accelerometer with a measured resolution of 6.3μg/√Hz and an output noise floor of -118dBV/√Hz for a gain of 204mV/g at extremely low frequencies. The resolution is improved by further reducing the
Dongning Zhao, M. Faisal Zaman, Farrokh Ayazi
Georgia Institute of Technology, Atlanta, GA