Towards Terahertz Operation of CMOS

📋 论文概要

该论文探讨了利用标准CMOS工艺实现太赫兹（300GHz-3THz）频段操作的可行性，解决了传统太赫兹器件成本高、集成度低的问题。通过设计新型晶体管结构和电路拓扑，展示了CMOS在太赫兹检测、成像和光谱分析中的潜力。

💡 主要创新点

• 提出了一种基于CMOS工艺的太赫兹信号产生与检测方法，突破了传统硅基器件的频率限制。
• 开发了适用于太赫兹频段的紧凑型天线和耦合结构，实现了高效信号辐射与接收。
• 展示了CMOS太赫兹系统在生物检测和材料表征中的应用，验证了其实际可行性。

🏷 关键词

📄 原文摘要

Dongha Shim1, Changhua Cao1,3, Ruonan Han1, Daniel J. Arenas1, David B. Tanner1, Stephen Hill4, Chih-Ming Hung2, Kenneth K. O1 University of Florida, Gainesville, FL, 2Texas Instruments, Dallas, TX NXP Semiconductors, Austin, TX, 4Florida State University, Tallahassee, FL 1 3 The electromagnetic spectrum between 300GHz and 3THz is broadly referred as terahertz [1]. The utility of this portion of spectrum for detection of chemicals and bio agents, for imaging of concealed weapons, cancer cells and manufacturing defects [1, 2], and for studying chemical species using electron paramagnetic resonance, as well as, in short range radars and secured high data rate communications has been demonstrated. However, high cost and low level of integration for III-V devices needed for the systems have limited their wide use. The improvements in the high frequency capability of CMOS have made it possible to consider CMOS as a lower cost alternative for realizing the systems that can greatly expand the

👥 作者与机构

Swaminathan Sankaran1,2, Chuying Mao1, Eunyoung Seok1,2,