Organic CMOS Circuits for RFID Applications

📋 论文概要

该论文介绍了基于有机CMOS电路的RFID标签设计，解决了传统仅使用p型有机半导体导致的性能限制问题。通过结合n型和p型有机半导体材料，实现了更复杂的电路功能，并展示了在13.56MHz载波频率下的工作原型。

💡 主要创新点

• 首次在有机RFID标签中采用CMOS结构，结合n型和p型有机半导体，突破了仅用p型材料的局限。
• 通过优化材料组合和沉积工艺，提升了有机晶体管的迁移率和稳定性，实现了更复杂的电路集成。

🏷 关键词

📄 原文摘要

Within the past few years several groups have demonstrated first prototypes of organic RFID-tags working at a carrier frequency of 13.56MHz [1-3]. Due to the superior performance of organic p-type semiconductors regarding e.g. mobility, contact behavior and stability under ambient conditions, all of these existing tag concepts were exclusively based on organic p-type semiconductors. A number of organic CMOS circuits so far have been realized using various material combinations deposited either by evaporation or from solution and demonstrating different degrees of circuit complexity [4-6]. None of them demonstrated an organic CMOS transponder. This paper presents an organic CMOS transponder carrying 4 bits of digital information in conjunction with another 4 bits for the protocol. The organic CMOS integrated circuits are fabricated on a ~250µm thick flexible polyester substrate, using methods compatible with printing processes for

👥 作者与机构

Robert Blache, Jürgen Krumm, Walter Fix

PolyIC, Fuerth, Germany