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ISSCC 2009Session 20 · SENSORS AND MEMSSensors32nm CMOS

A 1.05V 1.6mW 0.45°C 3σ-Resolution ∆Σ-Based Temperature Sensor with Parasitic-Resistance Compensation in 32nm CMOS

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📋 论文概要

本文提出了一款基于ΔΣ调制器的温度传感器,采用32nm CMOS工艺,工作电压1.05V,功耗1.6mW,实现了0.45°C的3σ分辨率。该传感器通过寄生电阻补偿技术,解决了多核处理器中热管理需求,提供了低功耗、高精度的温度测量方案。

💡 主要创新点

核心指标
1.05V 1.6mW 0.45°C 3σ-Resolution
工艺节点
32nm CMOS
重要性
发表年份
ISSCC 2009

🏷 关键词

温度传感器ΔΣ调制器寄生电阻补偿32nm CMOS多核处理器

📄 原文摘要

Intel, Hillsboro, OR In the multicore era, thermal/power management is essential in order to meet platform-performance and energy-efficiency requirements. Accurate temperature measurements are required to reliably maximize microprocessor performance under a thermal envelope. Furthermore, in a large multicore microprocessor, multiple-location hot-spot temperature measurements are critical to limit leakage through load balancing. The requirements for absolute inaccuracy are modest (<8°C), but good relative inaccuracy (<3°C) is needed [1,2]. Increases in transistor variations and switching noise make static measurements difficult, and having multiple local temperature sensors for each hot-spot location is impractical. Besides, trimming a sensor for each hot-spot is costly. This paper presents a temperature sensor for remote temperature sensing that achieves the required resolution and variation tolerances by: 1) chopping the input current to

👥 作者与机构

Y. William Li, Hasnain Lakdawala, Arijit Raychowdhury, Greg Taylor, K. Soumyanath

分类:Sensors · 年份:ISSCC 2009