⚡ 本页包含 AI 生成的分析内容，仅供参考
该论文提出了一种紧凑型CMOS MEMS麦克风，实现了66dB的SNR。通过优化输入晶体管尺寸和偏置电流，降低了放大器引入的噪声，其中1/f噪声对A加权SNR的影响略高于白噪声。
Pirmin Rombach1, Lars J. Stenberg1, Pietro Andreani4, Erik Bruun2 Pulse MEMS, Roskilde, Denmark Technical University of Denmark, Lyngby, Denmark 3 Pulse Advanced Acoustics, Amsterdam, Netherlands 4 Lund University, Lund, Sweden 1 MOS model). The optimal M1,2 width (W) is determined for several M1,2 lengths (L) and bias current Ibias, and the overall optimal set of values is W=600µm, L=3µm, Ibias=53µA. Noise measurements show that 1/f noise has a slightly higher impact than does white noise, when both contributions are A-weighted. The expected SNR degradation introduced by the amplifier is lower than 1.5dB for Vb=±10V. The amplifier consumes 120µA at 1.8V. 2 Silicon MEMS microphones that offer small size, ease of integration with CMOS electronics, and the ability to withstand lead-free solder reflow cycles, are becoming increasingly popular for high-volume consumer electronic products, and are competing in price and performance with traditional electret condenser
Jelena Čitaković1,2, Per F. Høvesten1, Gino Rocca1, Aart van Halteren3,