A 1.1V 5-to-6GHz Reduced-Component DirectConversion Transmit Signal Path in 45nm CMOS

📋 论文概要

该论文提出了一种在45nm CMOS工艺下、工作电压1.1V、频率5-6GHz的简化组件直接转换发射信号路径，旨在满足多无线电共存环境下对低成本、可编程收发前端的需求。通过减少组件数量并优化电路结构，解决了低电压下高性能发射路径的设计难题。

💡 主要创新点

• 采用简化组件架构，减少直接转换发射路径中的无源器件数量，降低芯片面积和成本。
• 在1.1V低电压下实现5-6GHz频段的高线性度与高效率，适用于多标准无线通信。
• 利用45nm CMOS工艺的先进特性，优化了混频器和功率放大器的设计，提升了整体性能。

🏷 关键词

📄 原文摘要

a rising consumer demand for multiple simultaneous transmit and receive communication links, the need for highly programmable, low-cost transceiver front-ends that co-exist with other radios on the same platform or die, has increased. For the past decade, CMOS technologies have demonstrated the ability to integrate the entire transceiver into a single silicon substrate, even for radio standards requiring the most aggressive performance [1-3]. However, concurrent trends associated with required transceiver performance in a co-existing radio environment, coupled with the low supply voltage and low-intrinsic device gain (gmro) associated with modern, nm-length CMOS devices, are presenting a new set of challenges for the analog-RF IC designer [4].

👥 作者与机构

Jacques C. Rudell1,2, Pankaj Goyal2, Christopher D. Hull2,

Shmuel Ravid3, Adil Kidwai2 University of Washington, Seattle, WA Intel, Hillsboro, OR, 3Intel, Haifa, Israel 1 2 With the advent of small mobile internet devices (MIDs) and