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ISSCC 2010Session 10 · DC-DC POWER CONVERSIONPower Management65nm CMOS

A 0.16mm2 Completely On-Chip Switched-Capacitor DC-DC Converter Using Digital Capacitance Modulation for LDO Replacement in 45nm CMOS

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📋 论文概要

该论文提出一种完全集成的开关电容DC-DC转换器,采用数字电容调制技术,用于替代低效的LDO,为无线SoC中低于1.2V的低功耗域供电。转换器面积仅0.16mm²,无需外部无源器件,有效提升了系统效率。

💡 主要创新点

工艺节点
65nm CMOS
重要性
发表年份
ISSCC 2010

🏷 关键词

开关电容DC-DC转换器数字电容调制LDO替代完全片上集成低功耗

📄 原文摘要

Massachusetts Institute of Technology, Cambridge, MA Iowa State University, Ames, IA 3 Texas Instruments, Dallas, TX 2 Reducing power consumption through VDD scaling is a major trend in nanometer CMOS circuits. In modern wireless SoCs, multiple power domains operate below 1.2V and draw less than 10mA of current. Currently, these domains are powered from a 1.8V rail through a low drop-out linear regulator (LDO). The 1.8V rail is obtained from a Li-ion battery using a switching regulator with offchip passives. It is highly inefficient to power circuit blocks that operate below 1.2V through LDOs. Switched-capacitor (SC) DC-DC converters are a viable solution to replace LDOs in some on-chip power domains but they currently occupy a large on-chip area [1]. Also, the voltage regulation schemes employed by current SC converters are either unsuitable in wireless systems or do not provide high efficiencies in on-chip use cases due to the dominance of bottom-plate

👥 作者与机构

Yogesh Ramadass1, Ayman Fayed2, Baher Haroun3, Anantha Chandrakasan1

分类:Power Management · 年份:ISSCC 2010