A 1.2V 10µW NPN-Based Temperature Sensor in 65nm CMOS with an Inaccuracy of ±0.2°C (3σ) from –70°C to 125°C

📋 论文概要

该论文提出了一种在65nm CMOS工艺中实现的基于NPN管的温度传感器，通过批量校准和修调技术，在-70°C至125°C范围内分别实现了±0.5°C和±0.2°C（3σ）的高精度，解决了深亚微米工艺中温度传感器精度不足的问题。

💡 主要创新点

• 采用NPN双极型晶体管作为感温元件，在65nm CMOS工艺中实现了高精度温度传感。
• 通过批量校准和修调技术，将温度传感器的精度提升至±0.2°C（3σ），相比同类深亚微米传感器提高了10倍。

🏷 关键词

📄 原文摘要

Salvatore Drago1,3, Domine M. W, Leenaerts1, Bram Nauta3 1 NXP Semiconductors, Eindhoven, Netherlands Delft University of Technology, Delft, Netherlands 3 University of Twente, Enschede, Netherlands 2 This paper describes a temperature sensor realized in a 65nm CMOS process with a batch-calibrated inaccuracy of ±0.5°C (3σ) and a trimmed inaccuracy of ±0.2°C (3σ) from –70°C to 125°C. This represents a 10-fold improvement in accuracy compared to other deep-submicron temperature sensors [1,2], and is comparable with that of state-of-the-art sensors implemented in larger-featuresize processes [3,4]. The sensor draws 8.3µA from a 1.2V supply and occupies an area of 0.1mm2, which is 45 times less than that of sensors with comparable accuracy [3,4]. These advances are enabled by the use of NPN transistors as sensing elements, the use of dynamic techniques i.e. correlated double sampling (CDS) and dynamic element matching (DEM), and a single room-temperature

👥 作者与机构

Fabio Sebastiano1,2, Lucien J. Breems1, Kofi A. A. Makinwa2,