A Thermal-Diffusivity-Based Temperature Sensor with an Untrimmed Inaccuracy of ±0.2°C (3σ) from –55°C to 125°C

📋 论文概要

本文提出了一种基于硅热扩散率的温度传感器，其数字输出对工艺和封装应力不敏感，且与绝对温度呈近似线性关系。通过利用热扩散率的温度依赖性，在0.18µm CMOS工艺中实现了未经校准的±0.2°C (3σ) 高精度，覆盖-55°C到125°C范围，并随工艺微缩而性能提升。

💡 主要创新点

• 利用硅的热扩散率与温度的关系实现温度传感，避免了传统温度传感器对工艺校准的依赖。
• 传感器精度主要受光刻分辨率限制，因此能受益于摩尔定律，在更先进工艺下精度更高。
• 首次在0.18µm CMOS工艺中实现未经校准的±0.2°C (3σ) 宽温度范围高精度，显著优于先前0.7µm工艺的结果。

🏷 关键词

📄 原文摘要

based on the thermal diffusivity of silicon. Its digital output is insensitive to both process spread and packaging stress and is a near-linear function of absolute temperature. The sensor’s accuracy is mainly limited by lithographic resolution, and so benefits from Moore’s Law. A sensor fabricated in a 0.18µm CMOS process exhibits an untrimmed device-to-device inaccuracy of ±0.2°C (3σ) from –55°C to 125°C. This is significantly better than that of similar sensors fabricated in a 0.7µm CMOS process [1, 2]. The AC thermal characteristics of silicon are determined by its thermal diffusivity, D. For lightly doped IC-grade silicon, D is insensitive to process spread and has a well-defined temperature dependence [3]. D can be determined by measuring the phase response of an electrothermal filter (ETF), which consists of a

👥 作者与机构

Caspar P.L. van Vroonhoven1, Dan d’Aquino2, Kofi A.A. Makinwa1, 1

Delft University of Technology, Delft, Netherlands, National Semiconductor, Santa Clara, CA 2 This paper describes a temperature sensor