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ISSCC 2010Session 17 · SENSORS & MEMSSensors45nm LP Digital CMOS

An In-Situ Temperature-Sensing Interface Based on a SAR ADC in 45nm LP Digital CMOS for the Frequency-Temperature Compensation of Crystal Oscillators

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📋 论文概要

该论文提出了一种基于SAR ADC的原位温度传感接口,用于补偿晶体振荡器的频率-温度漂移,以满足多无线电移动设备对频率稳定性(<1ppm)的严格要求。该接口在45nm LP数字CMOS工艺中实现,能够应对超过100°C的宽温度范围和快速温度变化。

💡 主要创新点

工艺节点
45nm LP Digital CMOS
重要性
发表年份
ISSCC 2010

🏷 关键词

温度传感SAR ADC晶体振荡器补偿45nm CMOS

📄 原文摘要

L.Richard Carley1, Jonathan C. Jensen2 1 Carnegie Mellon University, Pittsburgh, PA Intel, Hillsboro, OR 3 Intel, Haifa, Israel 2 Multi-radio (3G/4G/GPS) mobile communication devices impose stringent requirements (<1ppm) on a crystal oscillator’s (XO) frequency stability over a wide temperature range (>100°C). Furthermore, these devices often subject their internal XOs to sudden temperature ramps caused by power switching during sporadic user activities. In order for applications such as GPS to maintain satellite acquisition under such conditions, a low XO frequency drift rate with temperature (<50ppb/°C) is strongly desired. Traditionally, a discrete analog temperature-compensated XO (TCXO) is often used for crystal frequency temperature compensation. Recently, an integrated digital TCXO (DTCXO) [1] that uses an on-chip PTAT sensor and a ΔΣ ADC interface was presented. However, this system’s accuracy is limited by the proximity-induced temperature difference

👥 作者与机构

Zhenning Wang1, Richard Lin2, Eshel Gordon3, Hasnain Lakdawala2,

分类:Sensors · 年份:ISSCC 2010