A Thermal-Diffusivity-Based Frequency Reference in Standard CMOS with an Absolute Inaccuracy of ±0.1% from -55°C to 125°C

📋 论文概要

本文提出了一种基于硅热扩散率的片上频率参考，利用标准CMOS工艺实现，通过热扩散率的温度稳定性达到±0.1%的绝对精度，覆盖-55°C到125°C的宽温度范围，解决了传统RC或环形振荡器精度受工艺和温度影响大的问题。

💡 主要创新点

• 首次利用IC级硅的热扩散率作为频率参考，该物理量具有极好的温度稳定性和工艺一致性。
• 在标准CMOS工艺中实现热扩散率传感电路，无需特殊工艺或外部元件，通过电热滤波器的相频特性提取频率。
• 实现了±0.1%的绝对不准确度，同时功耗远低于LC振荡器，适合片上集成。

🏷 关键词

📄 原文摘要

Most electronic systems require a frequency reference, and so, much research has been devoted to the realization of on-chip frequency references in standard CMOS. However, the accuracy of such references is limited by the process spread and temperature drift of on-chip components. By means of trimming and temperature compensation, RC and ring oscillators have achieved inaccuracies in the order of 1% [1-2]. LC oscillators achieve inaccuracies below 0.1%, but dissipate much more power [3]. This paper describes a new approach, which exploits the well-defined thermal diffusivity of IC-grade silicon in order to generate frequencies stable to 0.1% over process and temperature variations. Such thermal diffusivity (TD) frequency references dissipate less power than LC oscillators, are more accurate than RC and ring oscillators and, uniquely, scale well with process. In a TD frequency reference, a frequency-locked loop (FLL) locks the frequency

👥 作者与机构

Mahdi Kashmiri, Michiel Pertijs, Kofi Makinwa

Delft University of Technology, Delft, Netherlands