A Single-Trim CMOS Bandgap Reference with a 3σ Inaccuracy of ±0.15% from -40°C to 125°C

📋 论文概要

该论文提出了一种单次修调的CMOS带隙基准电压源，通过斩波和曲率校正技术最小化非PTAT误差，并用单次室温修调消除残余PTAT误差，从而在-40°C到125°C范围内实现了±0.15%的3σ精度，解决了传统多温度修调带来的成本和高复杂度问题。

💡 主要创新点

• 采用斩波技术来消除放大器失调等非PTAT误差，提高基准精度。
• 引入曲率校正技术，改善带隙基准的温度系数。
• 仅需单次室温修调即可达到传统多次温度修调的性能，显著降低测试成本。

🏷 关键词

📄 原文摘要

15% (3σ) from -40ºC to 125ºC. This level of performance, previously only achieved by trimming at two or more temperatures [1, 2], was obtained by using chopping and curvature correction to minimize non-PTAT (proportional-to-absolutetemperature) errors, and canceling residual PTAT errors with a single room-temperature trim. A block diagram of the bandgap reference is shown in Fig. 4.3.1. This topology

👥 作者与机构

Guang Ge1, Cheng Zhang1, Gian Hoogzaad1, Kofi Makinwa2, 1

NXP Semiconductors, Nijmegen, Netherlands Delft University of Technology, Delft, Netherlands 2 This paper describes a CMOS bandgap reference with an inaccuracy of ±0